Abstract: This paper describes the method of constructing the model for thyri-stor device which used for power electric circuits and presents a nonlinear lumped equivalent circuit model for it.
In modelling of the thyristors, it is based on the analog of the physical process of carriers moyement inside the device. The following facts are also analysed:
(1) Injection of minority carriers in device.
(2) Generation and recombination of carriers in space charge region.
(3) The effects due to the avalanche multiplication basewidth modulation, and charge storage.
The mathematical formulas describing these physical process are replaced by corresponding nonlinear elements and an equivalent circuit model for a thyristor is formed which consists of nonlinear resistors, nonlinear capacitors and controlled current sources.
Using this model, it is possible to analyse the dynamic nonlinear characteristics of thyristor's ON-OFF process.