Microstructure and Magnetic Properties of Spin Valve Multilayer with Giant Magnetoresistance
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摘要: 用磁控溅射镀膜方法,制成了巨磁电阻自族间多层膜Ta/NiFe/Cu/NiFe/FeMn/Ta.它具有优良的特性.其室温磁电阻比率MR>2%,自由层矫顽力Hc1<160A/m,自由层零磁场漂Hf<800A/m和钉扎层交换场Hex≈20×103 A/m.作为新型磁功能材料,它满足高灵敏磁性传感器和硬盘读出头的要求.对多层膜制备的方法也作了系统研究,并讨论了缓冲层和钉扎层的制备工艺和微结构对磁性能的影响.Abstract: The spin valve multilayer, consisting of Ta/NiFe/Cu/NiFe/FeMn/Ta, with giant magnetoresistance(GMR) has been successfully produced by magnetron sputtering. It is Possessed of good properties. The magnetoresistance ratio MR>2% at room temperature, the coereivity of free layer Hcl< 160 A / m, shift field Hf < 800 A / m and the biasing exchange field Hex≈20·103 A / m. As a new magnetic functional malarial, these properties can meet the requirement for preparation of magnetic field sensors with high sensitivity, for example in magnetic recording magnetoresistance read head.
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Keywords:
- giant magnetoresistance /
- spin valve /
- magnetic functional material
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