氢化非晶态硅薄膜的渗氢内耗实验研究

Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen

  • 摘要: 用簧片振动法研究了GDa-Si:H薄膜气氛渗氢后的内耗.当测量频率为47.5Hz时,在-46℃处观察到氢致内耗峰,其激活能为0.30±0.05eV,弛豫时间因子为3.52×10-9 s.

     

    Abstract: The internal friction of GD a-Si:H films charged with hydrogen in hydrogen atmosphere were measured by reed vibrating method. As a result, hydrogen related peak appears at 47.5Hz and -46℃ with activation energy (0.30 ±0.05)eV and relaxation time 3.52×10-9 s. Further research is needed to make the nature clear.

     

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