加载速率对位错发射、层错宽度及位错速度影响

Influence of Loading Rate on Dislocation Emission, Width of StackingFault and Dislocation Velocity

摘要: 应用分子动力学方法研究了Cu和Al单晶在Ⅱ型加载条件下,加载速率对位错发射、层错宽度W及位错速度V_d的影响.结果表明,加载速率对W和V_d有显著影响.随着加载速率的增大,层错宽度减小,位错速度增大.当加载速率达到某一临界值时,能量不仅以发射位错的形式释放,而且形成孪晶,以降低体系的能量.

Abstract: Cu and Al single crystals with molecular dynamics simulation method was studied.Under mode Ⅱ loading, the influence of loading rate on dislocation emission, width of stacking fault and dislocation velocity was analyzed. The simulated results show that width of stacking fault decreases as loading rate increases, while dislocation velocity increase dramatically.If loading rate is very high, system energy will be released by dislocation emission, the twinning is formed as well.