基质掺杂离子对(Y,Rn)2O2S∶Sm3+,Ti4+,Mg2+(Rn=La,Gd,Lu,Ga,Al)红色长余辉材料余辉性能的影响

Effect of host-doping ions on the afterglow property of (Y,Rn)2O2S: Sm3+,Ti4+,Mg2+(Rn=La,Gd,Lu,Ga,Al) red phosphors

  • 摘要: 采用高温固相法制备了基质掺杂的(Y,Rn)2O2S:Sm3+,Ti4+,Mg2+(Rn=La,Gd,Lu,Ga,Al)红色长余辉材料,主峰均为4G5/26H7/2跃迁的红橙色光发射,不受基质掺杂的影响.余辉性能测试表明掺杂离子半径对余辉性能具有重要的影响:单掺时,与Y3+半径相近并略小时样品的余辉时间有正增长;双离子共掺时均为小半径的掺杂对余辉性能有显著的提高,其中之一半径较大时即具有负效应.并对可能存在的机理进行了初步探讨.

     

    Abstract: Host doped (Y,Rn)2O2S:Sm3+,Ti4+,Mg2+ (Rn=La, Gd, Lu, Ga, Al) red phosphors were prepared by solid state method. Their chief emission peaks are in the red-orange range coming from the energy transition of 4G5/26H7/2 and host-doping has little effluence on the emitting spectra. Afterglow results show that the semi diameter of doped ions has some effect on the longlasting property. When the doped ion is a little smaller than Y3+, the afterglow time will increase. When two ions are doped, two smaller ions doping will promote the long-lasting property; if one ion is larger than Y3+, it will shorten the long-lasting time. The presumable mechanism was also discussed.

     

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