Abstract: The success of graphene has revealed the great potential of two-dimensional materials, but its inherent zero bandgap limits its application in device fields, thus driving research towards transition metal dichalcogenides with natural bandgaps. Molybdenum disulfide (MoS2), as a typical representative in this system, has become a core model for graphene-like two-dimensional semiconductor research due to its stable semiconductor properties and excellent photoelectric response. This paper systematically reviews various preparation methods of MoS2 from bulk to monolayer and few-layer structures, covering top-down exfoliation and bottom-up synthesis techniques, and deeply explores its application progress in key fields such as optoelectronic devices, energy storage and conversion, sensing, and biomedicine. Finally, it summarizes the main challenges currently faced in MoS2 research and looks forward to future development directions and application prospects.