Mou Huifang, Cao Zhirong, Liang Qiang. Chemical Vapour Deposition of TiC and TiCxNy on the Cemented Carbide[J]. Chinese Journal of Engineering, 1989, 11(3): 258-263. DOI: 10.13374/j.issn1001-053x.1989.03.026
Citation: Mou Huifang, Cao Zhirong, Liang Qiang. Chemical Vapour Deposition of TiC and TiCxNy on the Cemented Carbide[J]. Chinese Journal of Engineering, 1989, 11(3): 258-263. DOI: 10.13374/j.issn1001-053x.1989.03.026

Chemical Vapour Deposition of TiC and TiCxNy on the Cemented Carbide

  • The deposition ratd and microhardnoss of the coating ofTiC and TiCxNy increase with input molar ratio (mc/Ti) and the maximum microhardness of TiC and TiCxNy are achieved as the ratio is 1 and 0.87 respectively. The coalings identified by X-ray di ff ractometer is TiC and TiCxNy. When m=0.94-1.47. deposition temperature at 1 223-1 323 K. the η phase at interlayer between the substrate and TiC coaling is not formed; mc/Ti=0.68-1.54. at 1 248K, N2/H2=1/2. the coating only is TiCxNy; mc/Ti ≤ 0.28. the η phase is formed. The apparent activation energy of TiC is 157.9 kJ/mol. It proves that the deposition process is controlled by surface process.
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